IRF1310NL
MOSFET N-CH 100V 42A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF1310NL is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 100 V and a continuous Drain Current (Id) of 42 A at 25°C (Tc). The IRF1310NL offers a low on-resistance (Rds On) of 36 mOhm maximum at 22 A and 10 V gate drive. Key parameters include a maximum gate charge (Qg) of 110 nC at 10 V and an input capacitance (Ciss) of 1900 pF maximum at 25 V. With a maximum power dissipation of 160 W (Tc), this MOSFET is suitable for use in industrial and power supply applications. The device is packaged in a through-hole TO-262-3 long leads package and operates over a temperature range of -55°C to 175°C.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 22A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 160W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 25 V |
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