IRF1302S
MOSFET N-CH 20V 174A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, IRF1302S, offers a 20V drain-source voltage and 174A continuous drain current at 25°C. This device features a low on-resistance of 4mOhm at 104A and 10V gate-source voltage. With a gate charge of 120 nC at 10V and input capacitance of 3600 pF at 25V, the IRF1302S is suitable for demanding applications. The MOSFET operates within a temperature range of -55°C to 175°C and has a maximum power dissipation of 200W. Packaged in a surface mount D2PAK (TO-263-3, D2PAK (2 Leads + Tab), TO-263AB), this component is utilized in industries such as automotive and industrial power control.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 174A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 104A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3600 pF @ 25 V |
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