IRF1104STRL
MOSFET N-CH 40V 100A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF1104STRL is an N-Channel power MOSFET designed for high-current applications. This component features a 40V Drain-to-Source voltage (Vdss) and a continuous drain current (Id) of 100A at 25°C (Tc). The low on-resistance (Rds On) of 9mOhm at 60A and 10V Vgs makes it highly efficient for power conversion.
With a gate charge (Qg) of 93 nC at 10V and input capacitance (Ciss) of 2900 pF at 25V, the IRF1104STRL offers robust switching characteristics. The power dissipation is rated at 170W (Tc) and 2.4W (Ta). It is housed in a TO-263-3, D2PAK surface-mount package, suitable for automated assembly. The operating temperature range is -55°C to 175°C. This component is widely utilized in the automotive, industrial, and telecommunications sectors for power management and motor control applications.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta), 170W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 93 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2900 pF @ 25 V |
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