IRF1104S
MOSFET N-CH 40V 100A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF1104S is a 40V N-Channel power MOSFET designed for demanding applications. This component features a low Rds(on) of 9mOhm at 60A and 10V Vgs, enabling efficient power switching. With a continuous drain current capability of 100A at 25°C (Tc) and a maximum power dissipation of 170W (Tc), it is suitable for high-current power management solutions. The device utilizes MOSFET technology and is housed in a TO-263-3, D2PAK package for surface mounting. Key parameters include a gate charge of 93 nC at 10V and an input capacitance of 2900 pF at 25V. Operating temperature ranges from -55°C to 175°C (TJ). Applications include power supplies, motor control, and automotive systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta), 170W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 93 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2900 pF @ 25 V |
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