IRF1104L
MOSFET N-CH 40V 100A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRF1104L is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component offers a 40V drain-source voltage (Vdss) and a continuous drain current (Id) of 100A at 25°C (Tc). Its low on-resistance (Rds On) of 9mOhm at 60A and 10V gate-source voltage (Vgs) minimizes conduction losses. The device exhibits a typical gate charge (Qg) of 93 nC at 10V, contributing to efficient switching performance. With a maximum power dissipation of 170W at 25°C (Tc), this MOSFET is suitable for demanding applications. The IRF1104L is housed in a TO-262-3 Long Leads, I2PAK, TO-262AA package, facilitating through-hole mounting. Key parameters include an input capacitance (Ciss) of 2900 pF at 25V and an operating temperature range of -55°C to 175°C (TJ). This component finds utility in various industrial sectors, including automotive and power supply designs.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta), 170W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 93 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2900 pF @ 25 V |
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