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IRF1018ESTRLPBF

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IRF1018ESTRLPBF

MOSFET N-CH 60V 79A D2PAK

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies HEXFET® IRF1018ESTRLPBF is an N-Channel Power MOSFET designed for high-performance applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 79A at 25°C. The low on-resistance (Rds On) of 8.4mOhm at 47A and 10V gate drive voltage minimizes conduction losses. With a maximum power dissipation of 110W (Tc) and a junction temperature range of -55°C to 175°C, this MOSFET is suitable for demanding thermal environments. Key parameters include a gate charge (Qg) of 69nC at 10V and input capacitance (Ciss) of 2290pF at 50V. The device is housed in a TO-263-3, D2PAK (TO-263AB) surface-mount package, supplied on tape and reel. This MOSFET technology is widely adopted in industrial power supplies, motor control, and automotive applications where robust switching performance is critical.

Additional Information

Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C79A (Tc)
Rds On (Max) @ Id, Vgs8.4mOhm @ 47A, 10V
FET Feature-
Power Dissipation (Max)110W (Tc)
Vgs(th) (Max) @ Id4V @ 100µA
Supplier Device PackageD2PAK
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2290 pF @ 50 V

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