IRF1018ESPBF
MOSFET N-CH 60V 79A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF1018ESPBF. This device features a 60V Drain-to-Source voltage and a continuous drain current of 79A at 25°C (Tc). Designed for high-efficiency switching applications, it offers a low on-resistance of 8.4mOhm maximum at 47A and 10V Vgs. The IRF1018ESPBF has a maximum power dissipation of 110W (Tc) and a gate charge of 69 nC at 10V. It utilizes advanced MOSFET technology with a Vgs threshold of 4V at 100µA and a Vgs(max) of ±20V. The component is housed in a TO-263-3, D2PAK surface mount package and operates within a temperature range of -55°C to 175°C (TJ). This MOSFET is suitable for demanding applications in power supply units and automotive systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 79A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.4mOhm @ 47A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 69 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2290 pF @ 50 V |