IRF1010ZSTRRPBF
MOSFET N-CH 55V 75A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF1010ZSTRRPBF is an N-Channel Power MOSFET designed for high-current applications. This device features a Drain-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of up to 75A at 25°C (Tc). With a maximum On-Resistance (Rds On) of 7.5mOhm at 75A and 10V gate drive, it offers low conduction losses. The MOSFET has a maximum power dissipation of 140W (Tc) and a junction temperature range of -55°C to 175°C. Key parameters include a Gate Charge (Qg) of 95 nC (Max) at 10V and an Input Capacitance (Ciss) of 2840 pF (Max) at 25V. The component is housed in a TO-263-3, D2PAK (2 Leads + Tab), TO-263AB package, suitable for surface mounting and supplied on a tape and reel. This component is utilized in industrial, automotive, and power supply applications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2840 pF @ 25 V |
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