IRF1010ZSPBF
MOSFET N-CH 55V 75A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF1010ZSPBF is an N-channel power MOSFET designed for high-efficiency switching applications. This component features a Drain-to-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) capability of 75A at 25°C (Tc). Its low on-resistance of 7.5mOhm at 75A and 10V gate drive voltage minimizes conduction losses. The device offers a maximum power dissipation of 140W (Tc) and a low gate charge of 95 nC at 10V, facilitating fast switching speeds. With an input capacitance (Ciss) of 2840 pF at 25V, it is suitable for demanding power management circuits. The IRF1010ZSPBF is housed in a TO-263-3, D2PAK surface mount package, enabling efficient thermal management. Typical applications include industrial power supplies, automotive electronics, and high-current switching systems. It operates across a wide temperature range from -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2840 pF @ 25 V |
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