IRF1010Z
MOSFET N-CH 55V 75A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF1010Z is an N-Channel Power MOSFET designed for high-efficiency power switching applications. It features a 55V drain-source voltage (Vdss) and a continuous drain current (Id) of 75A at 25°C. The device offers a low on-resistance (Rds On) of 7.5mOhm at 75A and 10V Vgs, minimizing conduction losses. Key parameters include a gate charge (Qg) of 95 nC at 10V and input capacitance (Ciss) of 2840 pF at 25V. With a maximum power dissipation of 140W, this MOSFET is suitable for use in industrial and automotive power management systems. The IRF1010Z is packaged in a TO-220AB through-hole configuration.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2840 pF @ 25 V |
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