IRF1010NSTRRPBF
MOSFET N-CH 55V 85A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF1010NSTRRPBF, features a 55V drain-to-source voltage and 85A continuous drain current at 25°C (Tc). This device offers low on-resistance of 11mOhm maximum at 43A, 10V. With a gate charge of 120 nC at 10V and input capacitance of 3210 pF at 25V, it is designed for efficient switching. The IRF1010NSTRRPBF is packaged in a D2PAK (TO-263-3) surface mount configuration on tape and reel. Its maximum power dissipation is 180W (Tc) and it operates across a temperature range of -55°C to 175°C (TJ). This component is suitable for applications in power supply, automotive, and industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 85A (Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 43A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 180W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3210 pF @ 25 V |
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