IRF1010NPBF
MOSFET N-CH 55V 85A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' HEXFET® IRF1010NPBF is a high-performance N-channel power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 85A at 25°C (Tc), with a maximum power dissipation of 180W (Tc). The IRF1010NPBF offers a low on-resistance (Rds On) of 11mOhm at 43A and 10V, facilitated by a drive voltage of 10V. Key parameters include a Gate Charge (Qg) of 120 nC at 10V and an input capacitance (Ciss) of 3210 pF at 25V. Packaged in a TO-220AB through-hole configuration, this device operates across a temperature range of -55°C to 175°C (TJ). It is commonly utilized in industrial power supplies, motor control, and automotive systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 85A (Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 43A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 180W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3210 pF @ 25 V |
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