IRF1010NL
MOSFET N-CH 55V 85A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF1010NL is an N-Channel power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 55 V and offers a continuous Drain Current (Id) of 85 A at 25°C (Tc), with a maximum power dissipation of 180 W (Tc). The low on-resistance of 11 mOhm at 43 A and 10 V (Vgs) is achieved through advanced MOSFET technology. Key parameters include a Gate Charge (Qg) of 120 nC at 10 V and an input capacitance (Ciss) of 3210 pF at 25 V. The IRF1010NL is housed in a TO-262-3 Long Leads package for through-hole mounting and operates across a wide temperature range of -55°C to 175°C (TJ). This device is commonly utilized in power supply units, motor controls, and automotive electronics.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 85A (Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 43A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 180W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3210 pF @ 25 V |
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