IRF1010EZS
MOSFET N-CH 60V 75A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF1010EZS is an N-Channel Power MOSFET featuring a 60V drain-source voltage and a continuous drain current of 75A at 25°C (Tc). This device offers a low on-resistance of 8.5mOhm maximum at 51A, 10V, with a gate charge of 86nC at 10V. The input capacitance (Ciss) is rated at 2810pF maximum at 25V. Designed for surface mounting in the TO-263-3, D2PAK package, it can dissipate up to 140W at 25°C (Tc). Operating temperature range is from -55°C to 175°C (TJ). This component is suitable for applications in industrial power supplies, motor control, and automotive systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 51A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 86 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2810 pF @ 25 V |
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