IRF1010EZLPBF
MOSFET N-CH 60V 75A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF1010EZLPBF is a high-performance N-Channel power MOSFET designed for demanding applications. This component features a 60V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 75A at 25°C (Tc). The IRF1010EZLPBF offers a low on-resistance of 8.5mOhm maximum at 51A and 10V gate drive, contributing to efficient power delivery. With a maximum power dissipation of 140W (Tc) and a junction temperature range of -55°C to 175°C, it is suitable for robust thermal environments. Key electrical characteristics include input capacitance (Ciss) of 2810pF (max) at 25V and gate charge (Qg) of 86nC (max) at 10V. The device is packaged in a TO-262-3 Long Leads, I2PAK, TO-262AA (TO-262) format for through-hole mounting. This MOSFET is commonly utilized in power supply units, automotive systems, and industrial motor control applications.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 51A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 86 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2810 pF @ 25 V |
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