IRF1010EZ
MOSFET N-CH 60V 75A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF1010EZ is a 60V N-Channel Power MOSFET designed for high-performance applications. This through-hole device, packaged in a TO-220AB, features a continuous drain current (Id) of 75A at 25°C and a maximum on-resistance (Rds On) of 8.5mOhm at 51A and 10V gate drive. The IRF1010EZ offers a power dissipation capability of 140W (Tc) and a junction temperature range of -55°C to 175°C. Key electrical parameters include a gate charge (Qg) of 86 nC at 10V and input capacitance (Ciss) of 2810 pF at 25V. This component is suitable for use in industrial and automotive power management systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 51A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 86 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2810 pF @ 25 V |
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