IRF1010ESTRR
MOSFET N-CH 60V 84A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF1010ESTRR is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 84A at 25°C (Tc), with a maximum power dissipation of 200W (Tc). The device offers a low on-resistance of 12mOhm at 50A and 10V. Key parameters include a Gate Charge (Qg) of 130 nC @ 10V and an Input Capacitance (Ciss) of 3210 pF @ 25V. The IRF1010ESTRR is housed in a TO-263-3, D2PAK surface mount package and is supplied on a tape and reel. Its robust design makes it suitable for use in automotive, industrial, and power supply sectors.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 84A (Tc) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3210 pF @ 25 V |
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