IRF100S201
MOSFET N-CH 100V 192A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET®, StrongIRFET™ N-Channel Power MOSFET, part number IRF100S201. This device features a 100V drain-source breakdown voltage and a continuous drain current capability of 192A at 25°C case temperature, with a maximum power dissipation of 441W. The low on-resistance of 4.2mOhm is achieved at 115A and a gate-source voltage of 10V. Key parameters include a gate charge (Qg) of 255 nC and input capacitance (Ciss) of 9500 pF. Designed for surface mounting, it is housed in a TO-263-3, D2PAK package. The operating temperature range is -55°C to 175°C. This component is suitable for applications in industrial power supplies, motor control, and automotive systems.
Additional Information
Series: HEXFET®, StrongIRFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 192A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 115A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 441W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 255 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9500 pF @ 50 V |
Request a Quote
Clients Also Buy
IRF7946TRPBF
MOSFET N-CH 40V 90A DIRECTFET MX
IRFS7430TRL7PP
MOSFET N-CH 40V 240A D2PAK
IRFB7546PBF
MOSFET N-CH 60V 75A TO220AB
