IRF100P219XKMA1
MOSFET N-CH 100V TO247ACManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies presents the IRF100P219XKMA1, an N-Channel MOSFET from the StrongIRFET™ series. This component features a Drain-to-Source Voltage (Vdss) of 100 V and a continuous Drain current (Id) of 203 A at 25°C (Tc). The device offers a low on-resistance of 1.7 mOhm (Max) at 100 A and 10 V (Vgs). With a maximum power dissipation of 341 W (Tc), it is suitable for demanding applications. Key electrical characteristics include a gate charge (Qg) of 270 nC (Max) at 10 V and an input capacitance (Ciss) of 12020 pF (Max) at 50 V (Vds). The MOSFET is housed in a TO-247-3 package, designed for through-hole mounting. Operating temperature ranges from -55°C to 175°C (TJ). This component finds application in power conversion, industrial motor control, and electric vehicle systems.
Additional Information
Series: StrongIRFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 203A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 341W (Tc) |
| Vgs(th) (Max) @ Id | 3.8V @ 278µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 270 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12020 pF @ 50 V |
Request a Quote
Clients Also Buy
IRFH7085TRPBF
MOSFET N-CH 60V 100A PQFN
IRF200P223
MOSFET N-CH 200V 100A TO247AC
IRL40SC228
MOSFET N-CH 40V 557A D2PAK
