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IRF100P218AKMA1

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IRF100P218AKMA1

MOSFET N-CH 100V 209A TO247AC

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

N-Channel 100 V 209A (Tc) 3.8W (Ta), 556W (Tc) Through Hole PG-TO247-3

Additional Information

Series: StrongIRFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C209A (Tc)
Rds On (Max) @ Id, Vgs1.28mOhm @ 100A, 10V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 556W (Tc)
Vgs(th) (Max) @ Id3.8V @ 278µA
Supplier Device PackagePG-TO247-3
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs412 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds24000 pF @ 50 V

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