IQE004NE1LM7SCATMA1
TRENCH <= 40VManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ 7 N-Channel Power MOSFET, part number IQE004NE1LM7SCATMA1, offers 15 V drain-to-source voltage and a continuous drain current of 58A at 25°C ambient and 379A at 25°C case. This 2.1W (Ta) / 89W (Tc) power dissipation component features a low Rds(on) of 0.45mOhm at 30A, 7V. Utilizing TRENCH technology, it supports gate drive voltages from 4.5V to 7V with a Vgs(th) of 2V at 432µA. The device has a maximum gate charge of 55 nC at 7V and input capacitance of 6240 pF at 7.5 V. Packaged in the PG-WHSON-8 (8-PowerWDFN) surface mount configuration, it operates from -55°C to 150°C. This MOSFET is suitable for applications in automotive and industrial power management.
Additional Information
Series: OptiMOS™ 7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 58A (Ta), 379A (Tc) |
| Rds On (Max) @ Id, Vgs | 0.45mOhm @ 30A, 7V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 432µA |
| Supplier Device Package | PG-WHSON-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 7V |
| Vgs (Max) | ±7V |
| Drain to Source Voltage (Vdss) | 15 V |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 7 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6240 pF @ 7.5 V |
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