IQE004NE1LM7CGSCATMA1
TRENCH <= 40VManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ 7 N-Channel Power MOSFET, part number IQE004NE1LM7CGSCATMA1, offers a 15V drain-source breakdown voltage and a continuous drain current of 58A at 25°C ambient and 379A at 25°C case. This device features a low on-resistance of 0.45mOhm at 30A and 7V Vgs, with a gate charge of 55 nC max at 7V. The input capacitance (Ciss) is 6240 pF max at 7.5V. Designed for surface mounting, it utilizes the PG-WHTFN-9 package, also known as 9-PowerWDFN. Power dissipation is rated at 2.1W (Ta) and 89W (Tc). Operating temperature ranges from -55°C to 150°C (TJ). This component is suitable for applications in automotive and industrial sectors requiring efficient power switching.
Additional Information
Series: OptiMOS™ 7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 9-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 58A (Ta), 379A (Tc) |
| Rds On (Max) @ Id, Vgs | 0.45mOhm @ 30A, 7V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 432µA |
| Supplier Device Package | PG-WHTFN-9 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 7V |
| Vgs (Max) | ±7V |
| Drain to Source Voltage (Vdss) | 15 V |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 7 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6240 pF @ 7.5 V |
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