IPZA60R180P7XKSA1
MOSFET N-CH 600V 18A TO247-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ P7 series N-Channel MOSFET, part number IPZA60R180P7XKSA1, offers a 600 V drain-source voltage and 18 A continuous drain current at 25°C (Tc). This through-hole component features a low Rds(on) of 180 mOhm maximum at 5.6 A, 10 V, and a gate charge of 25 nC maximum at 10 V. The device is housed in a PG-TO247-4 package, providing a maximum power dissipation of 72 W (Tc). With a broad operating temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for demanding applications in power factor correction, switch mode power supplies, and solar inverters.
Additional Information
Series: CoolMOS™ P7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 5.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 72W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 280µA |
| Supplier Device Package | PG-TO247-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1081 pF @ 400 V |
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