IPZA60R120P7XKSA1
MOSFET N-CH 600V 26A TO247-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ P7 series N-channel power MOSFET, part number IPZA60R120P7XKSA1. This device features a 600 V drain-source voltage and a continuous drain current of 26 A at 25°C (Tc). The MOSFET exhibits a maximum on-resistance (Rds On) of 120 mOhm at 8.2 A and 10 V gate-source voltage. Key parameters include a gate charge (Qg) of 36 nC at 10 V and input capacitance (Ciss) of 1450 pF at 400 V. The device is housed in a PG-TO247-4 package, suitable for through-hole mounting. Maximum power dissipation is 95 W (Tc). This component is utilized in applications such as switch mode power supplies and industrial power conversion.
Additional Information
Series: CoolMOS™ P7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 8.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 95W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 410µA |
| Supplier Device Package | PG-TO247-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1544 pF @ 400 V |
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