IPZA60R024P7XKSA1
MOSFET N-CH 600V 101A TO247-4-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ P7 series N-Channel MOSFET, part number IPZA60R024P7XKSA1, offers 600V drain-to-source voltage capability. This through-hole component features a low on-resistance of 24mOhm at 42A and 10V gate-source voltage. With a continuous drain current of 101A at 25°C (Tc) and a maximum power dissipation of 291W (Tc), it is suitable for demanding applications. Key parameters include a maximum gate charge of 164 nC at 10V and an input capacitance of 7144 pF at 400V. The device operates within a temperature range of -55°C to 150°C (TJ). This MOSFET is commonly utilized in power factor correction (PFC) stages, switch-mode power supplies (SMPS), and server power supplies. The package is PG-TO247-4-3.
Additional Information
Series: CoolMOS™ P7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 101A (Tc) |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 42A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 291W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 2.03mA |
| Supplier Device Package | PG-TO247-4-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 164 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7144 pF @ 400 V |
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