IPZ65R095C7XKSA1
MOSFET N-CH 650V 24A TO247-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ C7 series N-Channel Power MOSFET, part number IPZ65R095C7XKSA1. This device features a 650V drain-source breakdown voltage and a continuous drain current of 24A at 25°C (Tc), with a maximum power dissipation of 128W (Tc). The on-state resistance (Rds On) is 95mOhm at 11.8A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 45 nC (Max) at 10V and input capacitance (Ciss) of 2140 pF (Max) at 400V. The MOSFET is housed in a PG-TO247-4 package, suitable for through-hole mounting. This component is utilized in various industrial applications, including power supplies and motor control. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: CoolMOS™ C7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 95mOhm @ 11.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 128W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 590µA |
| Supplier Device Package | PG-TO247-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2140 pF @ 400 V |
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