IPZ60R125P6FKSA1
MOSFET N-CH 600V 37.9A TO247-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ P6 series N-channel power MOSFET, part number IPZ60R125P6FKSA1. This device features a 600 V drain-source voltage (Vdss) and a continuous drain current (Id) of 37.9 A at 25°C (Tc). It offers a maximum on-resistance (Rds On) of 99 mOhm at 14.5 A and 10 V gate drive. Key parameters include a gate charge (Qg) of 70 nC at 10 V and an input capacitance (Ciss) of 3330 pF at 100 V. The component has a maximum power dissipation of 219 W (Tc) and is housed in a PG-TO247-4 package for through-hole mounting. Operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for applications in power factor correction, server power, industrial power supplies, and solar inverters.
Additional Information
Series: CoolMOS™ P6RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 37.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 99mOhm @ 14.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 219W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1.21mA |
| Supplier Device Package | PG-TO247-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3330 pF @ 100 V |
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