IPZ60R070P6FKSA1
MOSFET N-CH 600V 53.5A TO247-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies' CoolMOS™ P6 series N-channel power MOSFET, part number IPZ60R070P6FKSA1, offers a 600V drain-source voltage capability. This through-hole component, housed in a PG-TO247-4 package, features a continuous drain current of 53.5A (Tc) at 25°C and a maximum power dissipation of 391W (Tc). The MOSFET exhibits a typical Rds On of 70mOhm at 20.6A, 10V, with a gate charge of 100 nC @ 10V. Key parameters include a ±20V Vgs (Max) and a 4.5V Vgs(th) (Max). This device is suitable for applications in power supply units and industrial motor drives.
Additional Information
Series: CoolMOS™ P6RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 53.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 20.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 391W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1.72mA |
| Supplier Device Package | PG-TO247-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4750 pF @ 100 V |
Request a Quote
Clients Also Buy
IPP60R190P6XKSA1
MOSFET N-CH 600V 20.2A TO220-3
IPA60R280P6XKSA1
MOSFET N-CH 600V 13.8A TO220-FP
IPL60R360P6SATMA1
MOSFET N-CH 600V 11.3A 8THINPAK
