IPZ60R041P6FKSA1
MOSFET N-CH 600V 77.5A TO247-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies' IPZ60R041P6FKSA1 is a 600V N-Channel CoolMOS™ P6 series power MOSFET. This device features a low Rds(on) of 41mOhm at 35.5A and 10V gate drive, with a continuous drain current capability of 77.5A at 25°C. The MOSFET offers a maximum power dissipation of 481W (Tc) and a gate charge of 170 nC at 10V. Its input capacitance (Ciss) is 8180 pF at 100V. The IPZ60R041P6FKSA1 is housed in a PG-TO247-4 package suitable for through-hole mounting and operates across a temperature range of -55°C to 150°C (TJ). This component is widely utilized in power factor correction (PFC) and switch-mode power supplies (SMPS) within the consumer electronics and industrial automation sectors.
Additional Information
Series: CoolMOS™ P6RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 77.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 41mOhm @ 35.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 481W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 2.96mA |
| Supplier Device Package | PG-TO247-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8180 pF @ 100 V |
Request a Quote
Clients Also Buy
IPP60R190P6XKSA1
MOSFET N-CH 600V 20.2A TO220-3
IPA60R280P6XKSA1
MOSFET N-CH 600V 13.8A TO220-FP
IPL60R360P6SATMA1
MOSFET N-CH 600V 11.3A 8THINPAK
