IPZ60R037P7XKSA1
MOSFET N-CH 650V 76A TO247-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies CoolMOS™ P7 series IPZ60R037P7XKSA1 is a 650 V N-channel Power MOSFET. This component features a low on-resistance of 37 mOhm at 29.5A and 10V Vgs, with a continuous drain current of 76A at 25°C. The maximum power dissipation is 255W at 25°C case temperature. Key parameters include a gate charge of 121 nC at 10V Vgs and an input capacitance of 5243 pF at 400V Vds. The device is housed in a PG-TO247-4 package suitable for through-hole mounting and operates across a temperature range of -55°C to 150°C. This MOSFET is commonly utilized in high-voltage power conversion applications across industries such as industrial power supplies, server power, and renewable energy systems.
Additional Information
Series: CoolMOS™ P7RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 76A (Tc) |
| Rds On (Max) @ Id, Vgs | 37mOhm @ 29.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 255W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1.48mA |
| Supplier Device Package | PG-TO247-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 121 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5243 pF @ 400 V |
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