IPZ40N04S5L4R8ATMA1
MOSFET N-CH 40V 40A 8TSDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies presents the IPZ40N04S5L4R8ATMA1, an N-channel Power MOSFET from the OptiMOS™-5 series. This component features a drain-source voltage (Vds) of 40V and a continuous drain current (Id) of 40A (Tc) at 25°C. Optimized for high efficiency, it boasts a maximum Rds(on) of 4.8mOhm at 20A and 10V. The device is housed in an 8-TSDSON package (PG-TSDSON-8) for surface mounting and offers a maximum power dissipation of 48W (Tc). With a gate charge (Qg) of 29nC at 10V and an input capacitance (Ciss) of 1560pF at 25V, it is suitable for demanding applications. This automotive-grade component is qualified to AEC-Q101 standards and operates across an industrial temperature range of -55°C to 175°C (TJ). It is commonly utilized in automotive systems and power management applications.
Additional Information
Series: OptiMOS™-5RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.8mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 48W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 17µA |
| Supplier Device Package | PG-TSDSON-8 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1560 pF @ 25 V |
| Qualification | AEC-Q101 |
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