IPZ40N04S5L3R6ATMA1
MOSFET_(20V 40V) PG-TSDSON-8Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™-5 N-Channel Power MOSFET, part number IPZ40N04S5L3R6ATMA1, is designed for demanding automotive applications. This 40V device features a low on-resistance of 3.6 mOhm at 20A and 10V Vgs, and a continuous drain current capability of 87A (Tj) at 25°C. The MOSFET offers a maximum power dissipation of 58W (Tc) and is housed in a PG-TSDSON-8-33 surface-mount package, suitable for tape and reel quantities. Key electrical parameters include a gate charge (Qg) of 32.8 nC at 10V Vgs and input capacitance (Ciss) of 1966 pF at 25V Vds. Qualified to AEC-Q101 standards and operating within a temperature range of -55°C to 175°C, this component is ideal for power management solutions in automotive systems.
Additional Information
Series: OptiMOS™-5RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 87A (Tj) |
| Rds On (Max) @ Id, Vgs | 3.6mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 58W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 21µA |
| Supplier Device Package | PG-TSDSON-8-33 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 32.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1966 pF @ 25 V |
| Qualification | AEC-Q101 |
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