IPZ40N04S5L2R8ATMA1
MOSFET N-CH 40V 40A 8TSDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™-5 N-Channel Power MOSFET, part number IPZ40N04S5L2R8ATMA1, features a 40V drain-source breakdown voltage and a continuous drain current capability of 40A at 25°C (Tc). This AEC-Q101 qualified component is designed for demanding applications, including automotive power management and motor control systems. The MOSFET offers a low on-resistance of 2.8 mOhm at 20A and 10V Vgs, along with a maximum gate charge of 52 nC at 10V. Its PG-TSDSON-8 package provides efficient thermal dissipation with a maximum power dissipation of 71W (Tc). Operating within a temperature range of -55°C to 175°C (TJ), this device supports gate drive voltages from 4.5V to 10V. The IPZ40N04S5L2R8ATMA1 is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: OptiMOS™-5RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 71W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 30µA |
| Supplier Device Package | PG-TSDSON-8 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 25 V |
| Qualification | AEC-Q101 |
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