IPZ40N04S53R1ATMA1
MOSFET N-CH 40V 40A 8TSDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™-5 series N-Channel MOSFET, part number IPZ40N04S53R1ATMA1. This PG-TSDSON-8 packaged device offers a 40V drain-source voltage and a continuous drain current of 40A at 25°C (Tc). Featuring a low Rds(on) of 3.1mOhm at 20A and 10Vgs, this MOSFET is designed for efficient power switching. Key specifications include a maximum power dissipation of 71W (Tc), a gate charge of 41nC at 10V, and input capacitance of 2310pF at 25V. The device is AEC-Q101 qualified, indicating its suitability for automotive applications. The operating temperature range is -55°C to 175°C (TJ). This component is supplied on tape and reel.
Additional Information
Series: OptiMOS™-5RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.1mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 71W (Tc) |
| Vgs(th) (Max) @ Id | 3.4V @ 30µA |
| Supplier Device Package | PG-TSDSON-8 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2310 pF @ 25 V |
| Qualification | AEC-Q101 |
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