IPW90R800C3FKSA1
MOSFET N-CH 900V 6.9A TO247-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPW90R800C3FKSA1 is a CoolMOS™ N-Channel Power MOSFET designed for high voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 900 V and a continuous drain current (Id) of 6.9 A at 25°C. The device offers a maximum on-resistance (Rds On) of 800 mOhm at 4.1 A and 10 V gate-source voltage. With a maximum power dissipation of 104 W (Tc), it is suitable for demanding power conversion tasks. Key parameters include a gate charge (Qg) of 42 nC at 10 V and an input capacitance (Ciss) of 1100 pF at 100 V. The MOSFET is housed in a PG-TO247-3-1 package with a through-hole mounting type and operates across a temperature range of -55°C to 150°C (TJ). This component is utilized in industries such as industrial power supplies and renewable energy systems.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 4.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 460µA |
| Supplier Device Package | PG-TO247-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 100 V |
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