IPW90R500C3FKSA1
MOSFET N-CH 900V 11A TO247-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ IPW90R500C3FKSA1 is an N-Channel Power MOSFET designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 900V and a continuous drain current (Id) of 11A at 25°C (Tc). With a maximum on-resistance (Rds On) of 500mOhm at 6.6A and 10V, it offers efficient power handling. The device includes a gate charge (Qg) of 68 nC at 10V and an input capacitance (Ciss) of 1700 pF at 100V. It is packaged in a PG-TO247-3-1 through-hole configuration, supporting a maximum power dissipation of 156W (Tc) and operating temperature from -55°C to 150°C (TJ). This MOSFET is suitable for use in power supply units, industrial motor control, and renewable energy systems.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 6.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 156W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 740µA |
| Supplier Device Package | PG-TO247-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 100 V |
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