IPW90R340C3FKSA1
MOSFET N-CH 900V 15A TO247-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies CoolMOS™ IPW90R340C3FKSA1 is a high-voltage N-channel Power MOSFET designed for demanding applications. Featuring a 900V breakdown voltage (Vdss) and a continuous drain current capability of 15A (Tc), this device offers a maximum power dissipation of 208W (Tc). The Rds(on) is specified at 340mOhm at 9.2A and 10V gate drive. Key parameters include a gate charge (Qg) of 94 nC (max) at 10V and input capacitance (Ciss) of 2400 pF (max) at 100V. The MOSFET utilizes through-hole mounting in a PG-TO247-3-1 package. Its operating temperature range is from -55°C to 150°C (TJ). This component finds application in power factor correction (PFC) circuits, switch-mode power supplies (SMPS), and industrial power systems.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 340mOhm @ 9.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA |
| Supplier Device Package | PG-TO247-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 94 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 100 V |
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