IPW90R1K0C3FKSA1
MOSFET N-CH 900V 5.7A TO247-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ MOSFET N-Channel IPW90R1K0C3FKSA1. This device features a 900V drain-source voltage and a continuous drain current of 5.7A at 25°C. The Rds On is a maximum of 1Ohm at 3.3A, 10V, with a gate charge of 34 nC at 10V. Input capacitance (Ciss) is 850 pF maximum at 100V. The component is packaged in a PG-TO247-3-1 through-hole package, with a maximum power dissipation of 89W at the case temperature. This MOSFET is suitable for applications in power factor correction and high voltage power supplies.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 3.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 89W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 370µA |
| Supplier Device Package | PG-TO247-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 850 pF @ 100 V |