IPW90R120C3FKSA1
MOSFET N-CH 900V 36A TO247-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' CoolMOS™ IPW90R120C3FKSA1 is a high-voltage N-Channel power MOSFET designed for demanding applications. This component features a maximum drain-source voltage (Vdss) of 900V and a continuous drain current (Id) of 36A at 25°C. With a low on-resistance (Rds On) of 120mOhm at 26A and 10V gate-source voltage, it offers excellent conduction efficiency. The device boasts a maximum power dissipation of 417W at the case temperature and a gate charge (Qg) of 270 nC at 10V. Its input capacitance (Ciss) is a maximum of 6800 pF at 100V. Packaged in a PG-TO247-3-1 through-hole configuration, this MOSFET is suitable for power factor correction, switch mode power supplies, and industrial applications. Operating temperature ranges from -55°C to 150°C.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 26A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 417W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 2.9mA |
| Supplier Device Package | PG-TO247-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 270 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6800 pF @ 100 V |