IPW65R420CFDFKSA1
MOSFET N-CH 650V 8.7A TO247-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ N-Channel Power MOSFET, part number IPW65R420CFDFKSA1, features a 650V drain-source voltage and 8.7A continuous drain current at 25°C. This through-hole component, housed in a PG-TO247-3-1 package, offers a maximum power dissipation of 83.3W at 25°C. With a typical Rds On of 420mOhm at 3.4A and 10V gate-source voltage, it utilizes advanced CoolMOS™ technology for efficient switching. The device has a gate charge (Qg) of 32 nC at 10V and an input capacitance (Ciss) of 870 pF at 100V. Operating temperature ranges from -55°C to 150°C. This MOSFET is suitable for applications in power factor correction, switch mode power supplies, and solar inverters.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 420mOhm @ 3.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83.3W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 340µA |
| Supplier Device Package | PG-TO247-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 100 V |
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