IPW65R310CFDFKSA1
MOSFET N-CH 650V 11.4A TO247-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies CoolMOS™ IPW65R310CFDFKSA1 is an N-Channel Power MOSFET designed for high-voltage applications. Featuring a drain-to-source voltage (Vdss) of 650 V and a continuous drain current (Id) of 11.4 A at 25°C (Tc), this component offers a maximum on-resistance (Rds On) of 310 mOhm at 4.4 A and 10 V gate-source voltage. The device boasts a low gate charge (Qg) of 41 nC at 10 V and an input capacitance (Ciss) of 1100 pF at 100 V. With a maximum power dissipation of 104.2 W (Tc) and an operating temperature range from -55°C to 150°C (TJ), it is suitable for demanding power conversion systems. The MOSFET is housed in a PG-TO247-3-1 package, facilitating through-hole mounting. This component finds application in industries such as consumer electronics and industrial power supplies.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 310mOhm @ 4.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 104.2W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 440µA |
| Supplier Device Package | PG-TO247-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 100 V |