IPW65R280E6FKSA1
MOSFET N-CH 650V 13.8A TO247-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ IPW65R280E6FKSA1 is an N-Channel power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 650 V and a continuous Drain Current (Id) of 13.8 A at 25°C, with a maximum power dissipation of 104 W. The Rds On is specified at a maximum of 280 mOhm at 4.4 A and 10 V gate drive. Key parameters include a Gate Charge (Qg) of 45 nC at 10 V and an Input Capacitance (Ciss) of 950 pF at 100 V. The device is housed in a PG-TO247-3-1 package for through-hole mounting. Operating temperature range is -55°C to 150°C. This MOSFET is utilized in power conversion systems, including switch mode power supplies and industrial motor drives.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 4.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 440µA |
| Supplier Device Package | PG-TO247-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 950 pF @ 100 V |
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