IPW65R190E6FKSA1
MOSFET N-CH 650V 20.2A TO247-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ IPW65R190E6FKSA1 is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a drain-source voltage (Vdss) of 650V and a continuous drain current (Id) of 20.2A at 25°C (Tc). With a low on-resistance (Rds On) of 190mOhm at 7.3A and 10V (Vgs), it minimizes conduction losses. The MOSFET exhibits a gate charge (Qg) of 73 nC maximum at 10V and an input capacitance (Ciss) of 1620 pF maximum at 100V (Vds). The IPW65R190E6FKSA1 has a maximum power dissipation of 151W (Tc) and is housed in a PG-TO247-3-1 package, suitable for through-hole mounting. Its robust design supports operation across a temperature range of -55°C to 150°C (TJ). This device is commonly utilized in power factor correction (PFC) stages, server and telecom power supplies, and industrial power applications.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 7.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 151W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 730µA |
| Supplier Device Package | PG-TO247-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 73 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1620 pF @ 100 V |