IPW65R190CFDFKSA1
MOSFET N-CH 650V 17.5A TO247-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ IPW65R190CFDFKSA1 is a 650V N-channel power MOSFET featuring a low on-resistance of 190mOhm at 7.3A and 10V Vgs. This device offers a continuous drain current of 17.5A (Tc) and a maximum power dissipation of 151W (Tc). Key electrical parameters include a gate charge of 68 nC (max) at 10V Vgs and input capacitance of 1850 pF (max) at 100V Vds. The MOSFET is housed in a PG-TO247-3-1 package with through-hole mounting. It operates across a temperature range of -55°C to 150°C (TJ). This component is suitable for applications in power factor correction, switch mode power supplies, and industrial power systems.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 7.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 151W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 730µA |
| Supplier Device Package | PG-TO247-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1850 pF @ 100 V |