IPW65R125C7XKSA1
MOSFET N-CH 650V 18A TO247-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ C7 series N-Channel Power MOSFET, part number IPW65R125C7XKSA1. This device features a 650 V breakdown voltage and a continuous drain current of 18 A at 25°C (Tc). The Rds On is specified at a maximum of 125 mOhm when driven at 8.9 A and 10 V. Key parameters include a gate charge (Qg) of 35 nC at 10 V and input capacitance (Ciss) of 1670 pF at 400 V. The device is housed in a PG-TO247-3 package suitable for through-hole mounting and supports a maximum power dissipation of 101 W (Tc). Operating temperature ranges from -55°C to 150°C (TJ). This component is commonly utilized in power factor correction (PFC), switch mode power supplies (SMPS), and server power applications.
Additional Information
Series: CoolMOS™ C7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 8.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 101W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 440µA |
| Supplier Device Package | PG-TO247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1670 pF @ 400 V |
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