IPW65R110CFDFKSA1
MOSFET N-CH 650V 31.2A TO247-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ IPW65R110CFDFKSA1 is a 650V N-Channel Power MOSFET. This device features a continuous drain current of 31.2A (Tc) at 25°C and a maximum power dissipation of 277.8W (Tc). The Rds(on) is specified at a maximum of 110mOhm at 12.7A and 10V gate drive. Key parameters include a gate charge (Qg) of 118 nC @ 10V and input capacitance (Ciss) of 3240 pF @ 100V. The MOSFET is housed in a PG-TO247-3-1 package with through-hole mounting. This component is suitable for applications in power factor correction, switch-mode power supplies, and general purpose power switching. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 12.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 277.8W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1.3mA |
| Supplier Device Package | PG-TO247-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 118 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3240 pF @ 100 V |