IPW65R099C6FKSA1
MOSFET N-CH 650V 38A TO247-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ N-Channel Power MOSFET, part number IPW65R099C6FKSA1, offers a 650V drain-source voltage and a continuous drain current of 38A at 25°C (Tc). This device features a low on-resistance of 99mOhm at 12.8A and 10V Vgs, with a maximum power dissipation of 278W (Tc). The N-Channel MOSFET utilizes a through-hole mounting type within a PG-TO247-3-1 package. Key parameters include a gate charge of 127 nC at 10V and an input capacitance of 2780 pF at 100V Vds. This component is suitable for applications in power factor correction, switch-mode power supplies, and solar inverters. The operating temperature range is -55°C to 150°C (TJ), with a ±20V maximum gate-source voltage.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 38A (Tc) |
| Rds On (Max) @ Id, Vgs | 99mOhm @ 12.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 278W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 1.2mA |
| Supplier Device Package | PG-TO247-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 127 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2780 pF @ 100 V |
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