IPW65R080CFDFKSA1
MOSFET N-CH 700V 43.3A TO247-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ IPW65R080CFDFKSA1 is an N-channel power MOSFET designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 700V and a continuous drain current (Id) of 43.3A at 25°C (Tc), with a maximum power dissipation of 391W (Tc). The Rds(on) is specified at a maximum of 80mOhm at 17.6A and 10V gate drive. Key parameters include a gate charge (Qg) of 170 nC @ 10V and input capacitance (Ciss) of 5030 pF @ 100V. The device utilizes Metal Oxide technology and is housed in a PG-TO247-3-1 package, suitable for through-hole mounting. Operating temperature range is from -55°C to 150°C (TJ). This MOSFET is commonly employed in power factor correction (PFC) stages, switch-mode power supplies (SMPS), and solar inverters.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 43.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 17.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 391W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1.76mA |
| Supplier Device Package | PG-TO247-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5030 pF @ 100 V |
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