IPW65R070C6FKSA1
MOSFET N-CH 650V 53.5A TO247-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' CoolMOS™ series IPW65R070C6FKSA1 is an N-channel power MOSFET designed for high-voltage applications. This component features a 650V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 53.5A at 25°C (Tc), with a maximum power dissipation of 391W (Tc). Its low on-resistance (Rds On) is specified as 70mOhm maximum at 17.6A and 10V gate-source voltage.
The device utilizes MOSFET technology and comes in a PG-TO247-3-1 package for through-hole mounting. Key electrical characteristics include a maximum gate charge (Qg) of 170 nC at 10V and a maximum input capacitance (Ciss) of 3900 pF at 100V. The operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for demanding applications in areas such as power supplies, renewable energy systems, and industrial motor control.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 53.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 17.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 391W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 1.76mA |
| Supplier Device Package | PG-TO247-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3900 pF @ 100 V |
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