IPW65R045C7300XKSA1
MOSFET N-CH 650V 46A TO247Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies' CoolMOS™ C7 series N-Channel Power MOSFET, IPW65R045C7300XKSA1, offers a 650V drain-source voltage and a continuous drain current of 46A at 25°C (Tc). This component features a maximum Rds(on) of 45mOhm at 24.9A and 10V. The device boasts a low gate charge (Qg) of 93 nC at 10V and an input capacitance (Ciss) of 4340 pF at 400V. With a maximum power dissipation of 227W (Tc), it is housed in a PG-TO247-3 package suitable for through-hole mounting. This MOSFET is engineered for demanding applications across industries such as server power supplies, industrial power supplies, and renewable energy systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: CoolMOS™ C7RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 46A (Tc) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 24.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 227W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1.25mA |
| Supplier Device Package | PG-TO247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 93 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4340 pF @ 400 V |
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